Development of molecular precursors for deposition of indium sulphide thin film electrodes for photoelectrochemical applications.
Identifieur interne : 000792 ( Main/Exploration ); précédent : 000791; suivant : 000793Development of molecular precursors for deposition of indium sulphide thin film electrodes for photoelectrochemical applications.
Auteurs : RBID : pubmed:23787951Abstract
Symmetrical and unsymmetrical dithiocarbamato pyridine solvated and non-solvated complexes of indium(III) with the general formula [In(S2CNRR')3]·n(py) [where py = pyridine; R,R' = Cy, n = 2 (1); R,R' = (i)Pr, n = 1.5 (2); NRR' = Pip, n = 0.5 (3) and R = Bz, R' = Me, n = 0 (4)] have been synthesized. The compositions, structures and properties of these complexes have been studied by means of microanalysis, IR and (1)H-NMR spectroscopy, X-ray single crystal and thermogravimetric (TG/DTG) analyses. The applicability of these complexes as single source precursors (SSPs) for the deposition of β-In2S3 thin films on fluorine-doped SnO2 (FTO) coated conducting glass substrates by aerosol-assisted chemical vapour deposition (AACVD) at temperatures of 300, 350 and 400 °C is studied. All films have been characterized by powder X-ray diffraction (PXRD) and energy dispersive X-ray analysis (EDX) for the detection of phase and stoichiometry of the deposit. Scanning electron microscopy (SEM) studies reveal that precursors (1)-(4), irrespective of different metal ligand design, generate comparable morphologies of β-In2S3 thin films at different temperatures. Direct band gap energies of 2.2 eV have been estimated from the UV-vis spectroscopy for the β-In2S3 films fabricated from precursors (1) and (4). The photoelectrochemical (PEC) properties of β-In2S3 were confirmed by recording the current-voltage plots under light and dark conditions. The plots showed anodic photocurrent densities of 1.25 and 0.65 mA cm(-2) at 0.23 V vs. Ag/AgCl for the β-In2S3 films made at 400 and 350 °C from the precursors (1) and (4), respectively. The photoelectrochemical performance indicates that the newly synthesised precursors are highly useful in fabricating β-In2S3 electrodes for solar energy harvesting and optoelectronic application.
DOI: 10.1039/c3dt50781e
PubMed: 23787951
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Development of molecular precursors for deposition of indium sulphide thin film electrodes for photoelectrochemical applications.</title><author><name sortKey="Ehsan, Muhammad Ali" uniqKey="Ehsan M">Muhammad Ali Ehsan</name><affiliation wicri:level="1"><nlm:affiliation>Department of Chemistry, Faculty of Science, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur, Malaysia.</nlm:affiliation><country xml:lang="fr">Malaisie</country><wicri:regionArea>Department of Chemistry, Faculty of Science, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur</wicri:regionArea></affiliation></author><author><name sortKey="Peiris, T A Nirmal" uniqKey="Peiris T">T A Nirmal Peiris</name></author><author><name sortKey="Wijayantha, K G Upul" uniqKey="Wijayantha K">K G Upul Wijayantha</name></author><author><name sortKey="Olmstead, Marilyn M" uniqKey="Olmstead M">Marilyn M Olmstead</name></author><author><name sortKey="Arifin, Zainudin" uniqKey="Arifin Z">Zainudin Arifin</name></author><author><name sortKey="Mazhar, Muhammad" uniqKey="Mazhar M">Muhammad Mazhar</name></author><author><name sortKey="Lo, K M" uniqKey="Lo K">K M Lo</name></author><author><name sortKey="Mckee, Vickie" uniqKey="Mckee V">Vickie McKee</name></author></titleStmt><publicationStmt><date when="2013">2013</date><idno type="doi">10.1039/c3dt50781e</idno><idno type="RBID">pubmed:23787951</idno><idno type="pmid">23787951</idno><idno type="wicri:Area/Main/Corpus">000568</idno><idno type="wicri:Area/Main/Curation">000568</idno><idno type="wicri:Area/Main/Exploration">000792</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Symmetrical and unsymmetrical dithiocarbamato pyridine solvated and non-solvated complexes of indium(III) with the general formula [In(S2CNRR')3]·n(py) [where py = pyridine; R,R' = Cy, n = 2 (1); R,R' = (i)Pr, n = 1.5 (2); NRR' = Pip, n = 0.5 (3) and R = Bz, R' = Me, n = 0 (4)] have been synthesized. The compositions, structures and properties of these complexes have been studied by means of microanalysis, IR and (1)H-NMR spectroscopy, X-ray single crystal and thermogravimetric (TG/DTG) analyses. The applicability of these complexes as single source precursors (SSPs) for the deposition of β-In2S3 thin films on fluorine-doped SnO2 (FTO) coated conducting glass substrates by aerosol-assisted chemical vapour deposition (AACVD) at temperatures of 300, 350 and 400 °C is studied. All films have been characterized by powder X-ray diffraction (PXRD) and energy dispersive X-ray analysis (EDX) for the detection of phase and stoichiometry of the deposit. Scanning electron microscopy (SEM) studies reveal that precursors (1)-(4), irrespective of different metal ligand design, generate comparable morphologies of β-In2S3 thin films at different temperatures. Direct band gap energies of 2.2 eV have been estimated from the UV-vis spectroscopy for the β-In2S3 films fabricated from precursors (1) and (4). The photoelectrochemical (PEC) properties of β-In2S3 were confirmed by recording the current-voltage plots under light and dark conditions. The plots showed anodic photocurrent densities of 1.25 and 0.65 mA cm(-2) at 0.23 V vs. Ag/AgCl for the β-In2S3 films made at 400 and 350 °C from the precursors (1) and (4), respectively. The photoelectrochemical performance indicates that the newly synthesised precursors are highly useful in fabricating β-In2S3 electrodes for solar energy harvesting and optoelectronic application.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">23787951</PMID><DateCreated><Year>2013</Year><Month>07</Month><Day>10</Day></DateCreated><DateCompleted><Year>2014</Year><Month>01</Month><Day>21</Day></DateCompleted><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1477-9234</ISSN><JournalIssue CitedMedium="Internet"><Volume>42</Volume><Issue>30</Issue><PubDate><Year>2013</Year><Month>Aug</Month><Day>14</Day></PubDate></JournalIssue><Title>Dalton transactions (Cambridge, England : 2003)</Title><ISOAbbreviation>Dalton Trans</ISOAbbreviation></Journal><ArticleTitle>Development of molecular precursors for deposition of indium sulphide thin film electrodes for photoelectrochemical applications.</ArticleTitle><Pagination><MedlinePgn>10919-28</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1039/c3dt50781e</ELocationID><Abstract><AbstractText>Symmetrical and unsymmetrical dithiocarbamato pyridine solvated and non-solvated complexes of indium(III) with the general formula [In(S2CNRR')3]·n(py) [where py = pyridine; R,R' = Cy, n = 2 (1); R,R' = (i)Pr, n = 1.5 (2); NRR' = Pip, n = 0.5 (3) and R = Bz, R' = Me, n = 0 (4)] have been synthesized. The compositions, structures and properties of these complexes have been studied by means of microanalysis, IR and (1)H-NMR spectroscopy, X-ray single crystal and thermogravimetric (TG/DTG) analyses. The applicability of these complexes as single source precursors (SSPs) for the deposition of β-In2S3 thin films on fluorine-doped SnO2 (FTO) coated conducting glass substrates by aerosol-assisted chemical vapour deposition (AACVD) at temperatures of 300, 350 and 400 °C is studied. All films have been characterized by powder X-ray diffraction (PXRD) and energy dispersive X-ray analysis (EDX) for the detection of phase and stoichiometry of the deposit. Scanning electron microscopy (SEM) studies reveal that precursors (1)-(4), irrespective of different metal ligand design, generate comparable morphologies of β-In2S3 thin films at different temperatures. Direct band gap energies of 2.2 eV have been estimated from the UV-vis spectroscopy for the β-In2S3 films fabricated from precursors (1) and (4). The photoelectrochemical (PEC) properties of β-In2S3 were confirmed by recording the current-voltage plots under light and dark conditions. The plots showed anodic photocurrent densities of 1.25 and 0.65 mA cm(-2) at 0.23 V vs. Ag/AgCl for the β-In2S3 films made at 400 and 350 °C from the precursors (1) and (4), respectively. The photoelectrochemical performance indicates that the newly synthesised precursors are highly useful in fabricating β-In2S3 electrodes for solar energy harvesting and optoelectronic application.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Ehsan</LastName><ForeName>Muhammad Ali</ForeName><Initials>MA</Initials><Affiliation>Department of Chemistry, Faculty of Science, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur, Malaysia.</Affiliation></Author><Author ValidYN="Y"><LastName>Peiris</LastName><ForeName>T A Nirmal</ForeName><Initials>TA</Initials></Author><Author ValidYN="Y"><LastName>Wijayantha</LastName><ForeName>K G Upul</ForeName><Initials>KG</Initials></Author><Author ValidYN="Y"><LastName>Olmstead</LastName><ForeName>Marilyn M</ForeName><Initials>MM</Initials></Author><Author ValidYN="Y"><LastName>Arifin</LastName><ForeName>Zainudin</ForeName><Initials>Z</Initials></Author><Author ValidYN="Y"><LastName>Mazhar</LastName><ForeName>Muhammad</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Lo</LastName><ForeName>K M</ForeName><Initials>KM</Initials></Author><Author ValidYN="Y"><LastName>McKee</LastName><ForeName>Vickie</ForeName><Initials>V</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2013</Year><Month>06</Month><Day>20</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Dalton Trans</MedlineTA><NlmUniqueID>101176026</NlmUniqueID><ISSNLinking>1477-9226</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2013</Year><Month>6</Month><Day>20</Day></PubMedPubDate><PubMedPubDate PubStatus="epublish"><Year>2013</Year><Month>7</Month><Day>9</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>6</Month><Day>22</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>6</Month><Day>22</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>6</Month><Day>22</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1039/c3dt50781e</ArticleId><ArticleId IdType="pubmed">23787951</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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